Semiconductor measurement technology

By Kenney, James M., Institute for Applied Technology (U.S.). Electronic Technology Division

Subjects: Mixing circuits, Microwave measurements, Effect of radiation on, Diodes, Schottky-barrier

Description: Abstract: The permanent damage Induced by nuclear radiation In silicon Schottky-barrler X-band microwave mixer diodes was assessed by subjecting separate groups of diodes to 60Co gamma rays and fast neutrons (E > 10 keV) of progressively higher levels, reaching a total gamma dose of 1.7 x lO6 rads(Sl) and & cumulative neutron fluence of 5.5 x 1015 cm-2. Measurements were made at a local oscillator frequency of 9375 MHz to determine changes In conversion Insertion loss, local oscillator return loss and SWR, 1-f output conductance, self-bias, and forward current at one dc bias voltage.